Method for reducing contact resistance of cmos image sensor

ABSTRACT

This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 12/772,539, filed on May 3, 2010, which claimspriority of U.S. Provisional Patent Application Ser. No. 61/175,291,filed on May 4, 2009, the disclosures of which are incorporated hereinby reference in their entireties.

TECHNICAL FIELD

This invention is related to a CMOS Image Sensor (CIS) silicide process,more specifically using “silicide through contact hole” method to reducepixel contact resistance.

BACKGROUND

An active-pixel sensor (APS) is an image sensor consisting of anintegrated circuit containing an array of pixel sensors, each pixelcontaining a photodetector and an active amplifier. The CMOS APS areused most commonly in cell phone cameras, web cameras and in someDigital single-lens reflex (DSLR) cameras. Such an image sensor isproduced by a CMOS process (and also known as a CMOS sensor or CIS).

A Self-Aligned Silicide (salicide) process is a process in whichsilicide contacts are formed only in those areas in which depositedmetal (which becomes a metal component of the silicide after annealing)is in direct contact with silicon, hence, are self-aligned. This processis implemented in MOS/CMOS processes in which ohmic contacts to thesource, drain, and poly-Si gate are formed.

The salicide process begins with deposition of a thin transition metallayer over fully formed and patterned semiconductor devices (e.g.,transistors). The wafer is heated, allowing the transition metal toreact with exposed silicon in the active regions of the semiconductordevice (e.g., source, drain, gate) forming a low-resistance transitionmetal silicide. The transition metal does not react with the siliconoxide and/or nitride insulators present on the wafer. Following thereaction, any remaining transition metal is removed by chemical etching,leaving silicide contacts in only the active regions of the device.

Currently many CIS processes use a silicide process at the poly gateonly, but not at the pixel contact. The CIS pixel contact producedwithout a silicide process can result in very high pixel contactresistance of more than 1000 ohm/sq, especially with the advancedtechnology, i.e., when the physical dimension of the CIS processtechnology shrinks gradually (e.g., 65 nm, 45 nm, etc.).

Also, the advanced technology will face a short channel effect (SCE)that induces a leakage concern. Short channel effect arises as thechannel length L is reduced to increase both the operation speed and thenumber of components per chip. The short-channel effects are attributedto two physical phenomena: (1) the limitation imposed on electron driftcharacteristics in the channel, and (2) the modification of thethreshold voltage due to the shortening channel length.

Because of SCE induced leakage, new silicide materials (e.g., Ni, Ta,Yb, Pt, or any other suitable materials and/or combinations thereof) canbe possibly used for different NMOS or PMOS. For example, the currentprocess technology for less than 65 nm resolution is a SiGe process forPMOS, which is different from an NMOS process. Therefore, contactetching will face a selective capability issue. The CIS contact-etchingprocess needs to stop on Silicide and Si film, the two films withdifferent etch rates. This stoppage is a challenge for the etchingprocess of advanced technology, especially with 65 nm or lessresolution. The selective capability issue can lead to an open pixelcontact, i.e., a contact hole having no contact with the source or drainof CMOS devices.

Accordingly, new methods and processes for CIS are desired to reducepixel contact resistance and to prevent high leakage and open contacts.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates an example integrated circuit structure according toone aspect of this invention;

FIG. 2 illustrates a flowchart according to one embodiment of thisinvention; and

FIGS. 3A-3L illustrate exemplary steps for a CIS process according toone embodiment of this invention.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of some embodiments are discussed in detail below.It should be appreciated, however, that the present invention providesmany applicable inventive concepts that can be embodied in a widevariety of specific contexts. The specific embodiments discussed aremerely illustrative of specific ways to make and use the invention, anddo not limit the scope of the invention.

A method for CMOS Image Sensor (CIS) silicide process using a “silicidethrough contact hole” method to reduce the pixel contact resistance isprovided. This method not only reduces pixel contact resistance (Rc),but also prevents high leakage and open contacts (i.e., contact holeshaving no contact with the source or drain of CMOS devices).

Throughout the various views and illustrative embodiments of the presentinvention, like reference numbers are used to designate like elements.

FIG. 1 illustrates an example integrated circuit structure according toone aspect of this invention. The CIS structure 100 includes a pixelarray structure 102 and a periphery structure 104, which includes anNMOS structure 106 and a PMOS structure 108. The pixel array structure102 shows Deep P-Well (DPW) 112, Cell (pixel) P-Well (CPW) 114, ShallowTrench Isolation (STI) 116, Inter Layer Dielectric (ILD) 118, andsilicide process through contact hole (after contact process) 126. ThePeriphery structure 104 shows Deep N-Well (DNW) 120, P-Well Layer (PWL)122, and N-Well Layer (NWL) 124.

The structure 100 can be processed with N+ (or P+) implantation at apixel contact hole area for a pixel contact plug to consider a Sirecess. The Si recess is the loss of Si depth from contact etch process(contact hole area) and the recess depth is the trade-off betweencontact open without a recess and a high leakage (deeper recess), so thepixel contact hole area may need extra N+ (or P+) for improvement. Theoptional pixel contact plug implant is N+ (or P+), because the pixelcell is NMOS with Input/Output device only, and the implant can enhancethe silicide process quality. A Physical Vapor Deposition (PVD) processusing Ni, Ta, Yb, Pt, or any other suitable material and/or combinationsthereof can be performed at the pixel contact hole area, and a “silicideprocess through contact hole” includes annealing for silicide formationat the contact hole area, which can reduce the leakage concern due to asmall silicide contact area.

One embodiment of the silicide process through contact hole methodreduces contact resistance (Rc) to approximately 10 ohm/sq, at least onthe order of 100 times lower compared to conventional processes withoutsilicide process for CIS pixel contact (>1000 Ohm/sq). Also the silicideprocess solves the open contact concern, and this process can definedifferent silicide materials for different device needed. Further, thismethod does not need the current pixel array Cell Resist Protect Oxide(CIRPO) process. The method is explained in more detail in thefollowing.

FIG. 2 illustrates an example flowchart according to one embodiment ofthis invention. At step 202, Resist Protect Oxide (RPO) is formed forthe photo resist (PR) cover without a silicide process at pixel array. ACIRPO photolithography photo mask is not necessary for the pixel array102. At step 204, Contact Etch Stop Layer (CESL) is formed. CESL is usedto reduce contact etch damages that can cause a leakage concern.

At step 206, Inter-Layer Dielectric (ILD) is formed. It can be processedusing Boro-Phospho-Silicate Glass (BPSG), PSG (phosphosilicate glass;phosphorus doped silicon glass), TEOS (tetraethoxysilane;tetraethylorthosilicate; tetraethelorthosilicate; tetrethoxysilicide),or any other suitable material and/or combinations thereof. BPSG issilicon dioxide (silica) with boron and phosphorus added, to lower thetemperature at which glass (oxide) starts to flow from about 950° C. forpure SiO₂ to about 500° C. for BPSG. BPSG is used to planarize thesurface, and deposited by Chemical Vapor Deposition (CVD). High AspectRatio Plasma (HARP) etching can be used to form the contact hole area inthe ILD.

At step 208, contact lithography and etching are performed. At step 210,pixel contact plug implanting is performed at the pixel contact holearea. At step 212, Physical Vapor Deposition (PVD) is performed with Ni,Ta, Yb, Pt, or any other suitable materials and/or combinations thereof,at the pixel contact hole area. PVD is a thin film deposition process inthe gas phase in which source material is physically transferred in thevacuum to the substrate without any chemical reactions involved andincludes evaporation (thermal and e-beam) and sputtering, commonly usedto deposit metals. At step 214, annealing is performed for silicideformation at the pixel contact hole area. At step 216, contact fillingis performed. At step 218, the first metal film layer (ME1) is defined.ME1 is the first metal film layer used to link contact holes (contactfor source/drain and poly gate).

FIGS. 3A-3J illustrate exemplary steps for a CIS process according toone embodiment of this invention. In FIG. 3A, RPO (Resist Protect Oxide)film 306 is formed on top of both the pixel array structure 102 and theperiphery structure 104. The exemplary pixel array structure 102includes DPW 112, CPW 114, P+ Photo Diode (PPPD) 302, and N+ Photo Diode(NPPD) 304. The exemplary periphery structure 104 includes DNW 120, PWL122, NWL 124, NMOS-Source Drain (NSD) 308, PMOS-Source Drain (PSD) 310,and threshold voltage (VT) implant for PMOS device (VTP) 312.

In FIG. 3B, Bottom Antireflective Coating (BARC) 314, an organic film,is formed on top of the RPO film. BARC 314 is used to enhance control ofcritical dimensions (CD) in advanced photolithography by suppressingstanding wave effects and reflective notching caused by thin filminterference. And pixel array Cell Resist Protect Oxide (CIRPO) 316 isformed to define silicide on a poly gate only. CIRPO 316 is formed onthe periphery structure 104 as a protection oxide layer of pixel cellfor source/drain area without a silicide process. In contrast, the CIRPOphoto mask can be skipped for the pixel array structure 102. The CIRPOphoto mask is only for open pixel cells and the photo resist (PR) layercovers all logic areas.

In FIG. 3C, Cell RPO Etch (CIRPO_ET) is skipped for BARC 314 on thearray structure 102 side. The purpose of the Cell RPO Etch process is todefine the poly gate with silicide process, Source/Drain of the device,and other Si areas without silicide process, so the etch process willremove RPO film of the poly gate and keep the RPO film of Si(Source/Drain of Device, Photo Diode) without being damaged by the BARCorganic film process. The etch BARC film is used at pixel cells only. InFIG. 3D, CIRPO_ET is skipped for RPO 306 due to the pixel array'ssilicide film formation (Poly gate, Source/Drain of device area) with athrough contact hole silicide process instead of the original Poly gateof pixel with silicide processes only by CIRPO processes (BARC, Photo,Etch). The etch oxide film is used at the pixel cell only.

In FIG. 3E, the Resist Protect Oxide (RPO) etching is performed. Theoxide can prevent a silicide process. The RPO defines low and highresistance poly silicon/oxide definition patterns. In FIG. 3F, a metalfilm 318 is formed for the silicide process.

In FIG. 3G, the pixel array structure 102 shows no silicide, while theperiphery structure 104 shows silicide 320 formed. In FIG. 3H, the InterLayer Dielectric (ILD) films 322, 324, 326 are formed. The dielectriclayers are used to electrically separate closely spaced interconnectlines arranged in several levels (multilevel metallization) in anadvanced integrated circuit. An ILD features a low dielectric constantto minimize capacitive coupling (“cross talk”) between adjacent metallines.

In FIG. 3I, Contact Hole (CH) photolithography and etching process isperformed on layers including ILD-1/2/3 and RPO 328. In FIG. 3J, N+ (orP+) implantation at pixel contact hole area is performed for pixelcontact plugs in the pixel array structure 102. Photo resist (PR) layer330 covers the periphery structure 104 area. Because the pixel cell isNMOS with input/output device only, the plug implant is N+ (or P+). Thisstep is optional and the implant can enhance silicide process quality.

In FIG. 3K, a contact glue layer film (e.g., Ti, Ni, Ta, Yb, or anyother suitable materials and/or combinations thereof) annealing process(heat treatment) is performed for silicide film formation. The silicidefilm 332 is formed through contact holes after the annealing process toprevent open contacts. This also reduces leakage, because of the smallsilicide contact area. In FIG. 3L, a contact glue plug is deposited andChemical Mechanical Polishing (CMP) is performed for film flatness.Afterwards, a metal-1 film layer can be defined.

The advantageous features of the present invention include reducedcontact resistance and leakage, as well as preventing open contacts. Thesilicide process through contact hole method described above solves theopen contact problem at pixel cells, i.e., contact holes having nocontact with source/drain of devices. The open contact problemoriginates from very high contact resistance Rc, and the silicideprocess through contact hole method lowers Rc using silicide film atcontact hole only for source/drain of devices in the pixel array. In oneembodiment, this method reduces Rc to approximately 10 ohm/sq, at leaston the order of 100 times lower compared to a conventional processwithout silicide process for CIS pixel contact (>1000 Ohm/sq). Also,different silicide materials can be defined for different devices thatare needed, and this method can be used instead of the current CIRPOprocess that requires additional masks. A skilled person in the art willappreciate that there can be many variations of the embodiments of thisinvention.

One aspect of this description relates to a method for reducing CMOSImage Sensor (CIS) contact resistance, the CIS having a pixel array anda periphery. The method includes performing Physical Vapor Deposition(PVD) at a pixel contact hole area, annealing for silicide formation atthe pixel contact hole area and performing contact filling.

Another aspect of this description relates to a method for reducing CMOSImage Sensor (CIS) contact resistance, the CIS having a pixel array anda periphery. The method includes performing Physical Vapor Deposition(PVD) at a pixel contact hole area, annealing for silicide formation atthe pixel contact hole area, performing contact filling and depositing afirst metal film layer.

Still another aspect of this description relates to a method forreducing CMOS Image Sensor (CIS) contact resistance, the CIS having apixel array and a periphery. The method includes implanting N+ or P+ forpixel contact plugs at a pixel contact hole area, performing PhysicalVapor Deposition (PVD) at pixel contact hole area, annealing forsilicide formation at the pixel contact hole area, performing contactfilling and depositing a first metal film layer, wherein the first metalfilm layer links contact holes for a source, a drain, or a poly gate ofa CMOS device.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. A method for reducing CMOS Image Sensor (CIS) contact resistance, theCIS having a pixel array and a periphery, the method comprising:performing Physical Vapor Deposition (PVD) at a pixel contact hole area;annealing for silicide formation at the pixel contact hole area; andperforming contact filling.
 2. The method of claim 1, further comprisingforming a bottom antireflective coating (BARC) on both the pixel arrayand the periphery.
 3. The method of claim 2, further comprising defininga polysilicon gate in the pixel array for silicide formation, whereindefining the polysilicon gate comprises: depositing a cell resistprotect oxide (CIRPO) on the periphery; and removing a portion of theBARC on the pixel array.
 4. The method of claim 1, further comprising:forming a silicide over a source, a drain and a gate of at least onetransistor located in the periphery prior to annealing for silicideformation at the pixel contact hole area.
 5. The method of claim 1,further comprising: forming an interlayer dielectric over the pixelarray and the periphery; and etching the interlayer dielectric over thepixel array to form the pixel contact hole area.
 6. The method of claim5, further comprising performing an ion implantation process onsidewalls of the interlayer dielectric at the pixel contact hole area.7. The method of claim 1, wherein performing PVD at the pixel contacthole area comprises depositing a first material at a first contact holearea and depositing a second material at a second contact hole area, andthe first material and the second material are different.
 8. The methodof claim 1, wherein annealing for silicide formation comprises reducinga resistance of a contact to approximately 10 ohm/sq.
 9. The method ofclaim 1, further comprising defining a first metal film layer (ME1),wherein ME1 links contact holes for a source, a drain, or a poly gate ofa CMOS device.
 10. A method for reducing CMOS Image Sensor (CIS) contactresistance, the CIS having a pixel array and a periphery, the methodcomprising: performing Physical Vapor Deposition (PVD) at a pixelcontact hole area; annealing for silicide formation at the pixel contacthole area; performing contact filling; and depositing a first metal filmlayer.
 11. The method of claim 10, wherein performing PVD at the pixelcontact hole area comprises depositing a first material at a firstcontact hole area and depositing a second material at a second contacthole area, and the first material and the second material are different.12. The method of claim 10, further comprising: forming a silicide overa source, a drain and a gate of at least one transistor located in theperiphery prior to annealing for silicide formation at the pixel contacthole area.
 13. The method of claim 10, further comprising forming abottom antireflective coating (BARC) on both the pixel array and theperiphery.
 14. The method of claim 13, further comprising defining apolysilicon gate in the pixel array for silicide formation, whereindefining the polysilicon gate comprises: depositing a cell resistprotect oxide (CIRPO) on the periphery; and removing a portion of theBARC on the pixel array.
 15. The method of claim 10, further comprising:forming an interlayer dielectric over the pixel array and the periphery;and etching the interlayer dielectric over the pixel array to form thepixel contact hole area.
 16. The method of claim 15, further comprisingperforming an ion implantation process on sidewalls of the interlayerdielectric at the pixel contact hole area.
 17. A method for reducingCMOS Image Sensor (CIS) contact resistance, the CIS having a pixel arrayand a periphery, the method comprising: implanting N+ or P+ for pixelcontact plugs at a pixel contact hole area; performing Physical VaporDeposition (PVD) at pixel contact hole area; annealing for silicideformation at the pixel contact hole area; performing contact filling;and depositing a first metal film layer, wherein the first metal filmlayer links contact holes for a source, a drain, or a poly gate of aCMOS device.
 18. The method of claim 17, wherein performing PVD at thepixel contact hole area comprises depositing a first material at a firstcontact hole area and depositing a second material at a second contacthole area, and the first material and the second material are different.19. The method of claim 17, further comprising: forming a silicide overa source, a drain and a gate of at least one transistor located in theperiphery prior to annealing for silicide formation at the pixel contacthole area.
 20. The method of claim 17, further comprising: forming abottom antireflective coating (BARC) on both the pixel array and theperiphery; and defining a polysilicon gate in the pixel array forsilicide formation, wherein defining the polysilicon gate comprises:depositing a cell resist protect oxide (CIRPO) on the periphery; andremoving a portion of the BARC on the pixel array.